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Strain-mediated voltage-controlled switching of magnetic skyrmions in nanostructures (应变介导的纳米结构中磁性孤立子的电压门控开关)
发布时间:2018-12-13

Strain-mediated voltage-controlled switching of magnetic skyrmions in nanostructures (应变介导的纳米结构中磁性孤立子的电压门控开关)
Jia-Mian HuTiannan Yang & Long-Qing Chen 
npj Computational Materials 4:62 (2018)
doi:s41524-018-0119-2
Published online:21 November 2018
Abstract| Full Text | PDF OPEN

摘要:磁性孤立子(skyrmions)是飘忽的自旋结构,通常由Dyzaloshinskii-Moriya相互作用才使之稳定。目前磁性孤立子的控制通常依赖于使用电流,这会导致密堆积设备出现过热。本研究使用相场模拟证明,用并置压电电压所诱导的应变,可在磁性纳米片内,重复创生和毁灭单独的Néel 孤立子。这种孤立子开关具有非易失性,每次开关仅消耗~0.5 fJ,比电流引起的自旋-转移-力矩开关能耗要小约5个数量级。我们发现,应变介导的中间涡旋状自旋结构产生了孤立子,并通过均匀收缩而消灭孤立子,在此期间Néel壁暂时转变为涡旋壁。这些发现有望促进由应变介导的孤立子电压门控相关的实验研究,并将其用于低功率自旋电子学的其他手性自旋结构   

Abstract:Magnetic skyrmions are swirling spin structures stabilized typically by the Dyzaloshinskii-Moriya interaction. The existing control of magnetic skyrmions has often relied on the use of an electric current, which may cause overheating in densely packed devices. Here we demonstrate, using phase-field simulations, that an isolated Néel skyrmion in a magnetic nanodisk can be repeatedly created and deleted by voltage-induced strains from a juxtaposed piezoelectric. Such a skyrmion switching is non-volatile, and consumes only ~0.5 fJ per switching which is about five orders of magnitude smaller than that by current-induced spin-transfer-torques. It is found that the strain-mediated skyrmion creation occurs through an intermediate vortex-like spin structure, and that the skyrmion deletion occurs though a homogenous shrinkage during which the Néel wall is temporarily transformed to a vortex-wall. These findings are expected to stimulate experimental research into strain-mediated voltage control of skyrmions, as well as other chiral spin structures for low-power spintronics. 

Editorial Summary

Spintronics: strain-mediated voltage control of magnetic skyrmions(自旋电子学:应变介导的磁性孤立子电压门控) 

多层磁性纳米结构中,内部压电层的电压所引起的应变,可创生和毁灭孤立的磁性物质。由本刊主编、美国宾州大学的陈龙庆教授与威斯康辛大学的胡嘉冕教授等,对集成多层体进行了相场模拟,该多层体中磁性超薄纳米片夹于覆盖层和重金属层之间。他们认为,只有磁体/重金属界面会产生净Dyzaloshinskii-Moriya相互作用,因此Néel 孤立子比Bloch 孤立子更容易产生。他们证明,仅由电压诱导的应变,便可在不使用磁场情况下,驱动非铁磁性开关从铁磁态转换为孤立子态,反之亦然。这些结果可以促进人们努力实现应变介导的孤立子电压门控,并将其应用于低功率自旋电子学的其他自旋结构

Isolated magnetic skyrmions can be created and deleted in a multilayer magnetic nanostructure by voltage-induced strains from the underlying piezoelectric layer. A team led by Long-Qing Chen from the Pennsylvania State University carried out phase-field simulations on an integrated multilayer, where a magnetic ultrathin nanodisk is sandwiched by a capping layer and a heavy-metal layer. They consider a net Dyzaloshinskii-Moriya interaction arising only from the magnet/heavy-metal interface, so that a Néel skyrmion is more favorable than a Bloch skyrmion. They demonstrate that the voltage-induced strain alone can drive non-volatile switching from a ferromagnetic state to a skyrmion and vice versa, without using magnetic fields. These results may stimulate experimental efforts in realizing strain-mediated voltage control of skyrmions, as well as other spin structures for low-power spintronics.

 
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