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论文题目:
Expanded InSe Crystal Structure with Reduced Intrinsic Defects for High-Performance Field-Effect Transistors
作者:
Wang, Zhenhua; Jin, Min; Song, Kepeng; Wang, Zonghao; Zhang, Zheng; Lin, Siqi; Ji, Hao; Sun, Mingyuan; Wang, Shuai; Chen, Jing; Liu, Hong; Zhang, Yu; Liu, Xuechao; Han, Lin
刊物名称:
ADVANCED MATERIALS
发表年度:
2025
卷:
期:
页码:
