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Research and Development of Inorganic Solar Cell Materials

发布时间: 2009-02-05 00:00 | 【 【打印】【关闭】

SEMINAR
The State Key Lab of
High Performance Ceramics and Superfine Microstructure
Shanghai Institute of Ceramics, Chinese Academy of Sciences
 中 国 科 学 院  上 海 硅 酸 盐 研 究 所 高 性 能 陶 瓷 和 超 微 结 构 国 家 重 点 实 验 室

 2009年度国家重点实验室邀请学术报告

 

Research and Development of Inorganic Solar Cell Materials


Speaker

Prof. TingKai Li

Principal Engineer, IC process Technology Laboratory
Sharp Electronics Corporation


 时间:2009 年 2 月 10 日(星期二)上午 9:00

地点:    2号楼607会议室

 


欢迎广大科研人员和研究生参与讨论!

 

Tingkai Li


        
Tingkai Li, Ph.D., is a Principle Member of Technical Staff and Project manager in Materials and Device Technology Laboratory, Sharp Laboratories of America, Inc.  He published over 100 technical papers and granted 86 US patents.  He has a rich experience in semiconductor and compound semiconductor equipment, integration processes, and device fabrications including solar cell, LED and solid state lighting, X-ray and NIR image, and nonvolatile memory device etc.   He joined a research of metal-ceramic joint for medical application, which awarded the third price of 1983 national discover awards in P.R. China.  He granted 2003 highest discover award and 2007 invention award on “High density plasma thin film deposition methods and processes” in Sharp labs of America Inc.  He was a leading organizer and edited two international conference proceedings of “Materials and Processes for Non-Volatile Memories.” (2007) and “Advances in GaN, SiC and III-V compound semiconductors on Si substrates” (2008).  He is an invited paper reviewer of Applied Physics Letter, Journal of Applied Physics, IEEE Electron Device Letter, IEEE Transaction of Electron Device etc.

WORK EXPERIENCE

Principle Member of Technical Staff and Project Manager      Jan. 1998 – Present
Sharp Laboratories of America / Process Technology Laboratory – Camas, WA

• Developed integration processes including thin film deposition, plasma etching and doping, implantation, photolithography technologies for solar cell, advanced CMOS, memory, digital X-ray & NIR image device, and photonics devices

• Developed high density PECVD processes including a-Si, c-Si, SiC, SiGe deposition for thin film solar cell fabrication

• Developed MOCVD GaN, SiC, ZnO & III-V compounds on Si for high power LED, solid state lighting and high power, high speed device applications

• Developed advanced CMOS logic, FeRAM and RRAM memory devices with 0.1 µm technologies including ALD high k gate oxides, metal gates, CVD Cu, shallow junction, silicides, CVD SiGe, ferroelectric and CMR materials etc  

• Developed nanotechnologies including nanorod, nanotip, nanowire and nanosize of ZnO, rare earth, Si rich oxides, and nano Si materials for photonics, bio-sensor and memory device applications

Staff Scientist and Project Leader        Nov. 1995 – Jan 1998
EMCORE Corporation/ Department of Research and Development – Somerset, NJ

• Developed of advanced MOCVD research and production tools and technologies for dielectric, ferroelectric, GaN, AlGaN, GaS, and III - V materials for LED and III – V solar cell devices

• Key participate in cooperation with Ramtron, Inc. for CVD deposition of ferroelectric thin films for FeRAM device 

Research Scientist and Group Leader        Dec. 1989 – Nov. 1995
Virginia Polytechnic and State University – Center for Advanced Ceramic Materials – Blacksburg, VA

• Drove cooperation research on high k oxides and ferroelectric thin films by CVD processes with Sharp
•  Developed MOCVD, sputtering, laser ablation, sol-gel and etching process techniques for Ta2O5, Pb(ZrxTi1-x)O3, and SrBi2(TaxNb1-x)2O9 ferroelectric thin films and memory devices

AWARDS & ACTIVITIES 
           
• The 2007 invention of the year award on “High density plasma thin film deposition methods and processes” in Sharp Inc.

• The 2003 invention of the year award in Sharp Labs. of America, Inc.

• Paper reviewer and guest editor of Applied Physics Letter, Journal of Applied Physics, IEEE Electron Device Letter, IEEE Transaction of Electron Device etc.

• Editor of a book titled “Materials and Processes for Non-Volatile Memories.” (2007)

• Editor of a book titled “Advances in GaN, SiC and III-V compound semiconductors on Si substrates” (2008).

• Lead organizer of MRS 2007 Spring meeting Symposium” Materials and Processes for Non-Volatile Memories” (2007).

• Lead organizer of MRS 2008 Symposium “Advances in GaN, SiC and III-V compound semiconductors on Si substrates”

PATENT ISSUED (A total of 86 U.S patents)

1. Tingkai Li, Sheng Teng Hsu, David Evan R, “Resistance random access memory devices and method of fabrication ” U.S. Patent 7407858 (August 5, 2008).

2. Tingkai Li, Sheng Teng Hsu, Ulrich; Bruce D, Burgholzer; Mark, Hill; and Ray A “Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications .” U.S. Patent 7,338,907 (March 4, 2008).

3. Tingkai Li, Sheng Teng Hsu and Ulrich; Bruce, “Integration processes for fabricating a conductive metal oxide gate ferroelectric memory transistor .” U.S. Patent 7,329,548 (Feburary 12, 2008).

4. Tingkai Li, Sheng Teng Hsu, “Conductive metal oxide gate ferroelectric memory transistor.” U.S. Patent 7,297,603 (November 20, 2007).

5. Tingkai Li, Sheng Teng Hsu and Bruce D. Ulrich, “Ultra-shallow metal oxide surface channel MOS transistor.” U.S. Patent 7,256,465 (August 14, 2007).

6. Tingkai Li, Lawrence Charneski, Weiwei Zhuang, David Evans and Sheng Teng Hsu, “System and method for forming a bipolar switching PCMO film.” U.S. Patent 7,235,407 (June 26, 2007). 

7. Tingkai Li, Weiwei Zhuang, David R. Evans, and Sheng Teng Hsu, “PCMO thin film with resistance access memory (RRAM) characteristics” U.S. Patent 7,060,586 B2 (June 13, 2006).

8. Tingkai Li and Sheng Teng Hsu, “In2O3 thin film resistance control by doping metal oxide insulator for MFMox device applications” U.S. Patent 7,008,833 B2 (March 7, 2006).

9. Tingkai Li and Sheng Teng Hsu, “Method of forming ferroelectric thin film on a high-k layer” U.S. Patent 7,008,801 B2 (March 7, 2006).

10. Tingkai Li, Fengyan Zhang, Yoshi Ono Sheng Teng Hsu “Ferroelastic Integrated Circuit Device” U.S. Patent 6, 737, 693, (May 18, 2004).

11. Tingkai Li, Sheng Teng Hsu, “Ferroelectric Lead germanate Thin Film and deposition Method” U.S. Patent 6,495,378 (December 6, 2002).

12. Tingkai Li and Dane Scott, “ Liquid Vaporizer System and Method” US. Patent 5,835,678 (Nov. 10, 1998).

PUBLICATIONS (A total of 101 papers)

1. Kung-Liang Lin, Edward-Yi Chang, Tingkai Li, and etc. “Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method.” Applied Physics Letters, 91, 222111 (2007) 

2. Sheng T. Hsu and Tingkai Li, “Resistance random access memory switching mechanism.” Journal of Applied Physics, 101, 024517 (2007)

3. Tingkai Li, Sheng Teng Hsu, Bruce D. Ulrich, and David R. Evans, “Semiconductive metal oxide ferroelectric memory transistor: A long-retention nonvolatile memory transistor” Appl. Phys. Lett. 86, 123513 (2005)

4. Tingkai Li, Sheng Teng Hsu, Bruce D. Ulrich, Lisa Stecker and Dave Evans, "One Transistor Memory Devices with Improved Retention Characteristics" Jpn. J. Appl. Phys. Vol. 41, 6890 (2002)

5. Tingkai Li,  Sheng Teng Hsu, Bruce Ulrich etc. “Fabrication and Characterization of Pb5Ge3O11 One-transistor-memory Device” Appl. Phys. Lett. 79 (11) 1661 (2001)

6. Tingkai Li,  Fengyan Zhang and Sheng Teng Hsu, “The Ferroelectric Properties of c-axis Oriented Pb5Ge3O11 Thin Films Prepared by Metalorganic Chemical Vapor Deposition” Appl. Phys. Lett. 74 (2) 296 (1999)

7. Y.F. Zhu, S.B. Desu and T.K. Li, “SrBi2Ta2O9  Thin films made by liquid  source metal-organic chemical vapor deposition ," J. Mater. Res., 12 (3) 783 (1997)

8. Tze-chiun Chen, Tingkai Li and S.B. Desu, “Structure Development Studies of SrBi2(Ta1-xNbx)2O9 Thin Films.” J. Mater. Res., 12 2165 (1997)

9. T.K. Li, Pete Zawadzki, Richard A. Stall and William J. Kroll, "Ferroelectric PbZr1-xTixO3 Thin Films Made by Various Metalorganic Chemical Vapor Deposition Techniques” SPIE., 3008, 359 (1997)

10. T.K. Li, Y.F. Zhu, S.B. Desu, C.H. Peng, and N. Masaya, "Metal organic Chemical Vaporization Deposition for SrBi2Ta2O9 Ferroelectric Thin films," Appl. Phys. Lett. 68 (5) 29 (1996)

11. T.K. Li, D. Hirschfeld, and J. J. Brown, "Thin Film Coatings of (Ca0.6,Mg0.4)Zr4(PO4)6 on Si3N4 and SiC," J. Mater. Res. 9 (8) 2014 - 2028 (1994)

12. T.K. Li, D. Hirschfeld, and J. J. Brown, "(Ca1-x,Mgx)Zr4(PO4)6 and ZrP2O7 Coatings and Foams," Ceramic Transaction vol. 52,  Low- Expansion  Materials.  Ed, by D. Stinton, 163-184 (1994)

13. T.K. Li, D. Hirschfeld, S. Vanaken, and J. J. Brown, "The Synthesis, Sintering, and Thermal Properties of (Ca1-x,Mgx)Zr4(PO4)6 (CMZP) Ceramics," Journal of  Materials Research, 8 (11) 2954-2967 (1993)