当前位置:首页>新闻动态>学术活动

Basics of Atomic Layer Deposition (ALD):From Precursor Selection To Film Deposition and Applications

发布时间: 2009-12-17 09:27 | 【 【打印】【关闭】

SEMINAR
The key laboratory of Inorganic Functional Materials and Integerated Devices
Shanghai Institute of Ceramics, Chinese Academy of Sciences
中国科学院上海硅酸盐研究所
无机功能材料与集成器件重点实验室

2009年学术讲座

报告题目:
Basics of Atomic Layer Deposition (ALD):
From Precursor Selection To Film Deposition and Applications
Speaker: Zhengwen Li (李正文)

时间:2009年12月21日(星期一)下午14:00
地点:2号楼 607室
邀请人:董显林 研究员
    王根水 研究员

Abstract

Atomic Layer Deposition (ALD) has become one of the most promising candidates for making thin and continuous films recently with atomic-scale thickness. Successful applications of ALD depend on whether appropriate precursor chemistry can be designed and whether proper deposition conditions can be developed. In this talk, ALD applications will be overviewed in microelectronics, nanotechnologies, and surface coatings for solar PV and batteries technologies, followed by ALD reactor design, precursor requirement and characterization, ALD of metals and dielectrics, and selected applications will be discussed in details, such as ALD Cu, TiN, HfO2, capping layer for low-dielectrics, et. al.
李正文:IBM半导体研发中心顾问科学家,Harvard University(哈佛大学)博士学位,发表论文20多篇,申请专利16项。

欢迎广大科研人员和研究生参与讨论!