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Mechanism of Doping limit in extremely heavily doped semiconductors: Sn-doped In2O3
2017-03-01 10:25:16 | 编辑: | 【 【打印】【关闭】

  Key Laboratory of Inorganic Functional Material and Device, CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences 

 中国科学院无机功能材料与器件重点实验室 

  Mechanism of Doping limit in extremely heavily doped semiconductors: Sn-doped In2O3 

  Prof. Chul Hong Park 

  Department of Physics Education 

  Pusan National University 

  Gumjung, Pusan 46241, Korea 

  时间:2017年3月2日(星期四)下午14:00 

    地点: 4 号楼 14楼第二会议室 

  联系人:郑嘹赢  研究员 

         李国荣 研究员  

欢迎各位老师同学光临! 

Abstract:

The microscopic structure of the extremely heavily Sn-doped In2O3 are investigated through the first-principles total energy calculations. The evolution of the doping efficiency around the doping limit is investigated. 

It is shown that the optimal dopant concentration is determined by the interaction between the defect and compensating defects. The formation energies of compensating defects are shown to be significantly reduced by the interactions with the dopants. The effect of the interaction is proportional to the dopant concentration. Thus as the concentration of impurity exceeds 1021 cm-3, the formations of defects are enhanced, and thus surprisingly the concentration of the free electron carrier is found to be lowered, even if the concentration of dopant increases. 

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