联系我们  |  网站地图  |  English   |  移动版  |  中国科学院 |ARP
站内搜索:
首页 简介 管理部门 科研部门 支撑部门 研究队伍 科研成果 成果转化 研究生教育 党建与创新文化 科普 信息公开 OA系统
学术活动
环境健康研究
“2019功能氧化物电子陶瓷...
Ternary Phase Diagram Co...
闪烁探测器及其在安检领域...
Engineering Silver Nanow...
“2019新型压电材料与声学...
Selective detection of h...
Photonics Research in So...
非人灵长类体细胞核移植技...
Hyperbranched polyethoxy...
Functional branched meta...
以上游靶点为基础的新型抗...
Optical ceramics and tec...
Transparent ceramics mad...
Femtosecond opto-magneti...
现在位置:首页>新闻动态>学术活动
Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
2019-05-10 10:42:38 | 【 【打印】【关闭】

SEMINAR

The State Key Lab of

High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics, Chinese Academy of Sciences

中 国 科 学 院 上 海 硅 酸 盐 研 究 所 高 性 能 陶 瓷 和 超 微 结 构 国 家 重 点 实 验 室

 

Interface Engineering for 2D Phosphorene Based Optoelectronic Devices 

        

Wei Chen

  Department of Physics, National University of Singapore, Singapore

    

    

  时间:2019 5 15日(星期三)上午 10:00    

  地点:嘉定园区F82会议室

 

欢迎广大科研人员和研究生参与讨论! 

联系人:孙宜阳(69906536  


  报告摘要: 

  Two-dimensional (2D) layered materials like graphene and transition metal dichalcogenides (TMDs) have been considered as promising building blocks for the next generation nanoelectronic devices, showing great potentials to extend the scaling limits existing in silicon based complementary metal-oxide-semiconductor field-effect-transistors (CMOS-FET) as well as to serve as a high mobility alternative to organic semiconductors for flexible electronic and optoelectronic devices. As one-atomic or a few atomic thin layers, the interface plays essential role in determining the performance of 2D materials based devices, such as charge injection/collection at metal/2D interfaces, charge carrier traps at the dielectric/2D interfaces, etc. Without precise control of the surface and interface properties, many 2D materials based devices will not function properly.  

  In this talk, I will summarize and discuss our recent work for interface engineered 2D phosphorene and TMDCs based field-effect-transistors (FETs) and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the electron and hole doping effect on the transport properties and optoelectronic response of phosphorene devices. 

    

  报告人简介:   

   Dr Wei Chen is currently an associate professor in both the Chemistry Department and Physics Department at the National University of Singapore (NUS). He received his Bachelor degree in Chemistry from Nanjing University (China) in 2001 and his PhD degree from the Chemistry Department at NUS in 2004. His current research interests include molecular-scale interface engineering for organic, graphene and 2D materials based electronics and optoelectronics, and interface-controlled nanocatalysis for energy and environmental research. 

    

版权所有 中国科学院上海硅酸盐研究所 沪ICP备05005480号-1
长宁园区地址:上海市长宁区定西路1295号 电话:86-21-52412990 传真:86-21-52413903 邮编:200050
嘉定园区地址:上海市嘉定区和硕路585号  电话:86-21-69906002 传真:86-21-69906700 邮编:201899