Ferroelectric (FE) materials have switchable bistable states with opposite spontaneous electric polarization that can be reversed via external electric field, enabling application in non-volatile memory devices. The traditional FE materials, such as perovskite oxide PbTiO3, BaTiO3, and BiFeO3 where the electric polarization originates from the displacement of octahedral center ions are facing many challenging in miniaturization and integration of nanoelectronics device, mainly due to interface distortion and depolarization field. Two-dimensional (2D) FE materials have the advantages of atomic thickness and clean interface, which is conducive to nanoscale integration. However, the 2D FE materials which have been achieved in experiments under ambient conditions remain rare due to stringent constrains on lattice symmetry and stability. Sliding ferroelectricity (SFE) found in 2D vdW bilayers where the out-of-plane electric polarization can be switched by lateral sliding between the two monolayers opens a new avenue for 2D ferroelectricity. However, the electric polarization of these SFE materials is much weaker than that of the traditional ferroelectric materials. Additionally, the coupling of different ferroic orders (such as magnetoelectric coupling) in multiferroic materials is essential for information processing and memory devices. Considering that antiferromagnetic (AFM) materials have the advantages of faster spin dynamics and low sensitivity to stray magnetic fields, searching for a 2D AFM materials with remarkable electric polarization and magnetoelectric coupling, is of great significance for achieving SFE-controlled electron spin polarization and relevant device applications. In this work, a team led by Prof. Mingwen Zhao from the School of Physics in Shandong University, employed first-principles calculations to demonstrate the enhanced SFE and magnetoelectric coupling in the antiferromagnetic 2D vdW bilayer and multilayers composed of the recently-synthesized MnSe monolayers. The computations showed that the electric polarization of MnSe bilayer is an order of magnitude larger than that of MoS2 and WTe2. Additionally, both SFE and magnetoelectric coupling can be effectively regulated by external strain and/or hole doping. The tunable ferroelectricity and magnetoelectric coupling of the 2D vdW MnSe materials offer a promising platform for study of sliding multiferroics and relevant spintronics device applications.