Thermoelectric materials enable the direct conversion of heat into electricity without mechanical components. The anomalous Nernst effect can produce a transverse voltage without any assistance of external magnetic field, further reducing the size of device and enhancing its stability. However, the bottleneck in its application is the thermoelectric conversion efficiency. This study proposes a design principle for enhancing the anomalous Nernst effect pinning at the Fermi level, which differs from the traditional trial-and-error approach for large anomalous Nernst effect materials. Inverse design based on electronic structure can significantly accelerate the discovery of new candidate systems. A team led by Prof. Qihang Liu from Southern University of Science and Technology, China, theoretically demonstrates that under a Zeeman field, a pair of Dirac nodes exhibits an odd-distributed, double-peak anomalous Hall conductivity curve with respect to the chemical potential and a compensated carrier feature. As a result, a 300% enhanced anomalous Nernst conductivity is obtained compared with the simple two-band Weyl semimetal model. Combining the aforementioned band model with first-principles calculations, this study provides two practical candidate materials: the Dirac semimetals Na3Bi and NaTeAu. Under a Zeeman field, their anomalous Nernst conductivity near the Fermi level can reach 0.4 Am^(-1) K^(-1) and 1.3 Am^(-1) K^(-1), respectively. Notably, the anomalous Hall conductivity curve with respect to chemical potential of NaTeAu exhibits a double-peak feature, resulting in a maximum value of anomalous Nernst conductivity near the Fermi level, consistent with the Dirac band model under a Zeeman field. Furthermore, by substituting 50% Na by Fe in NaTeAu, they obtained a ferromagnetic topological material NaFeTe2Au2, with intrinsic Zeeman splitting. It exhibits a large anomalous Nernst conductivity up to 3.7 Am^(-1) K^(-1) near the Fermi level. They also artificially designed a full-Heusler ferromagnetic material, Co2PdGe, which also exhibits a large anomalous Nernst conductivity around the Fermi level (6.2 Am^(-1) K^(-1)). In summary, this research provides a functional materials design approach: first design a specific band structure and then screen materials that meet this electronic structure, which will accelerate the discovery of new candidate materials.